Strained Transistors - REFERENCE PMOS-strained - Intel
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Strained TransistorsProcess Strain, Mobility Enhancement and Drive CurrentProcess Strain, Mobility Enhancement and Different Crystal OrientationsProcess Strain, Mobility Enhancement and High-K Metal GateNext Generation Strain causes the Si atoms to stretch apart by ~1%. Strain provides mobility improvement in two ways. The first is by reducing the effective mass of the silicon. The second is by moving carriers to places with good effective mass (or reducing movement of carriers to places with bad effective mass). The way this works for electrons is as follows. Fo...
Strain causes the Si atoms to stretch apart by ~1%. Strain provides mobility improvement in two ways. The first is by reducing the effective mass of the silicon. The second is by moving carriers to places with good effective mass (or reducing movement of carriers to places with bad effective mass). The way this works for electrons is as follows. Fo...
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