Can We Measure Next-Gen FinFETs? - Semiconductor Engineering
Fig. 2: XRXRD is used to measure strain, thickness, composition and lattice relaxation of epitaxial layers. Source: Bruker/Jordan Valley . In another application, HRXRD is also one of the metrology candidates for the channel materials, namely SiGe, for 7nm. In addition, OCD is also competing in the arena.
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